Optoelectronic device with bypass diode

ABSTRACT

Optoelectronic devices with bypass diodes are described. An optoelectronic device includes a bypass diode, a heat spreader unit disposed above, and extending over, the bypass diode, and a heat sink disposed above the heat spreader unit. Another optoelectronic device includes a bypass diode, a heat spreader unit disposed above, but not extending over, the bypass diode, and a heat sink disposed above the heat spreader unit.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.61/267,637, filed Dec. 8, 2009, the entire contents of which are herebyincorporated by reference herein.

TECHNICAL FIELD

Embodiments of the present invention are in the field of renewableenergy and, in particular, optoelectronic devices and systems withbypass diodes.

BACKGROUND

Light-emitting diode (LED) and photovoltaic (PV) devices are two commontypes of optoelectronic devices. Thermal management and assembly ofoptoelectronic systems, such as systems including LED and PV devices,may be considered when evaluating such systems for fabrication anddeployment. For example, the area of systems of devices with integratedbypass diodes is one area ripe for improvements in thermal managementand assembly. Challenges for the fabrication and deployment of suchsystems include a possible need for a low resistance thermal pathbetween the bypass diode and a heat sink, as well as a robust electricalisolation of operating voltages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a plan view of a conventional optoelectronic systemincluding a bypass circuit path and externally mounted diode.

FIG. 2A illustrates a plan view of a portion of an optoelectronic systemwith internal bypass diodes, in accordance with an embodiment of thepresent invention.

FIG. 2B illustrates a plan view of a portion of an optoelectronic systemwith internal bypass diodes, in accordance with an embodiment of thepresent invention.

FIG. 3 illustrates an isometric view of a portion of an optoelectronicsystem with internal bypass diodes, in accordance with an embodiment ofthe present invention.

FIG. 4 illustrates a cross-sectional view of an optoelectronic devicewith a bypass diode, in accordance with an embodiment of the presentinvention.

FIG. 5 illustrates a cross-sectional view of an optoelectronic devicewith a bypass diode, in accordance with an embodiment of the presentinvention.

FIG. 6 illustrates a top-down view of an optoelectronic device with aheat spreader unit, in accordance with an embodiment of the presentinvention.

FIG. 7A illustrates a solar concentrator apparatus with a summersolstice illumination pattern, in accordance with an embodiment of thepresent invention.

FIG. 7B illustrates a solar concentrator apparatus with a wintersolstice illumination pattern, in accordance with an embodiment of thepresent invention.

DETAILED DESCRIPTION

Optoelectronic devices with bypass diodes and optoelectronic systemswith bypass diodes are described herein. In the following description,numerous specific details are set forth, such as specific arrangementsof heat spreader units relative to bypass diodes, in order to provide athorough understanding of embodiments of the present invention. It willbe apparent to one skilled in the art that embodiments of the presentinvention may be practiced without these specific details. In otherinstances, well-known fabrication techniques, such as laminationtechniques, are not described in detail in order to not unnecessarilyobscure embodiments of the present invention. Furthermore, it is to beunderstood that the various embodiments shown in the Figures areillustrative representations and are not necessarily drawn to scale.

Disclosed herein are optoelectronic devices with bypass diodes. In oneembodiment, an optoelectronic device includes a bypass diode. A heatspreader unit is disposed above, and extending over, the bypass diode. Aheat sink is disposed above the heat spreader unit. In one embodiment,an optoelectronic device includes a bypass diode. A heat spreader unitis disposed above, but not extending over, the bypass diode. A heat sinkis disposed above the heat spreader unit. In one embodiment, theoptoelectronic device is a photovoltaic cell.

Also disclosed herein are optoelectronic systems with bypass diodes. Inone embodiment, an optoelectronic system includes a plurality of pairsof optoelectronic devices. The optoelectronic system also includes aplurality of bypass diodes, one or more of the bypass diodes disposedbetween each of the pairs of optoelectronic devices. Also included is aplurality of heat spreader units, one or more of the heat spreader unitsdisposed above, and extending over, each of the bypass diodes. Theoptoelectronic system also includes a plurality of heat sinks, one ormore of the heat sinks disposed above each of the heat spreader units.In one embodiment, an optoelectronic system includes a plurality ofpairs of optoelectronic devices. The optoelectronic system also includesa plurality of bypass diodes, one or more of the bypass diodes disposedbetween each of the pairs of optoelectronic devices. Also included is aplurality of heat spreader units, one or more of the heat spreader unitsdisposed above, but not extending over, each of the bypass diodes. Theoptoelectronic system also includes a plurality of heat sinks, one ormore of the heat sinks disposed above each of the heat spreader units.In one embodiment, the plurality of optoelectronic devices is aplurality of photovoltaic cells.

Thermal management and assembly of optoelectronic systems, such aslight-emitting diode (LED) or photovoltaic (PV) systems, may beaddressed by integrating bypass diodes within a cell package or laminatesystem. However, in accordance with an embodiment of the presentinvention, due to a high density of dissipated power within such adiode, a low thermal resistance path to ambient air may be needed inorder to ensure reliable operation of a corresponding diode and cellenclosure. Furthermore, in order to facilitate high volumemanufacturing, design concepts and assembly techniques that are based oncontinuous processing may also be desirable. In an embodiment, a thermalresistance between a bypass diode and an external heat sink is reduced,while a more uniform and flat surface across a high heat flux region ofa cell enclosure or package is provided. In one embodiment, a flatsurface along a back side of a cell enclosure improves interface andbond quality during attachment of the cell and a bypass diode enclosureto a heat sink. In an embodiment, the improved thermal performanceallows devices to operate at lower temperatures thereby increasing lightto electrical conversion efficiency and reducing degradation and failureof components. In addition, in one embodiment, a high volume continuousmanufacturing processes to be used to fabricate arrays of optoelectronicdie for LED lighting applications and photovoltaic receivers for solarconcentrators is enabled.

Conventional methods of integrating bypass diodes into systems such asPV and LED systems have involved attaching the bypass diodes externallyto a cell laminate or package with back-sheet penetrations to allowelectrical connections. This approach may require a significant numberof additional assembly steps and may limit the number of diodes that canbe integrated along a string of cells. In accordance with an embodimentof the present invention, a flexible substrate is manufactured bycontinuous roll processing of metal foils, dielectric layers and polymeradhesive coatings. In one embodiment, bare optoelectronic die and bypassdiodes are then soldered to the leads of the substrate or cellinterconnects and then encapsulated between a glass cover sheet and ametal heat spreader integrated within the substrate at the region ofhighest heat flux into the die. In a specific embodiment, shallowpockets or through-holes are punched into the substrates to accommodatea diode that is thicker than the cells, allowing for a thin, lowresistance thermal coupling to the heat spreader or substrate. Thethrough-holes or shallow pockets may allow fabrication of a flatter backsurface of the cell package or enclosure that improves thermal couplingof the heat sink and cell. A heat spreader with area removed directlyover a high heat density may seem counter-intuitive. However, in aparticular embodiment, since the majority of the diode heat flows to theheat sink via the interconnects and cell, any improvements in systemthermal management will also improve (e.g., reduce) the diodetemperatures. This may also result in a single thermal solution for theboth the cell and diode. In an aspect of the above particularembodiment, extending the heat spreader beyond the cell and heat sinkfootprint also allows thermal integration of diodes mounted in aperipheral location to the cell.

As such, in an embodiment, a portion of an optoelectronic system ismanufactured in roll form to allow for high volume continuous processingand subsequent assembly of such an optoelectronic system. In anembodiment, this approach enables a shift in the way photovoltaicsystems are manufactured and assembled while providing improved thermaland electrical functionality.

As photovoltaic systems leverage concentrated optical technologies toreduce cell size, the benefits of a robust bypass circuit design mayalso increase. Since concentrator systems often have smaller cell areas,a thermal load from back-driving a string current through such a cellmay increase the chance for damage and permanent failure of the cell asa result of overheating. Perhaps most significant, in an embodiment,system performance may be significantly reduced by partial shading,mismatch and other defects in a string and, thus, a more frequentintegration of bypass diodes (e.g., 1 bypass diode per cell, 1 bypassdiode per 2 cells, etc.) may limit the impact of the non-uniformitywhile capturing the maximum possible performance of the remaining highperforming cells. Further, in an embodiment, a higher frequency ofdiodes limits the reverse voltage across the diode terminals, reducingthe electronic requirements of the device and the likelihood of areverse breakdown failure.

From an assembly and manufacturing perspective, the integration of abypass diode into a cell string without back-sheet penetrations mayreduce complexity and secondary manufacturing steps, providingadditional benefits beyond system performance. For example, inconventional 1-sun photovoltaic modules, the two-dimensional array ofcells are often divided into series cell strings (typically 3) with abypass diode allowing electrical current to bypass, by a parallel path,one or more strings if those cells are shaded or inoperative. In such aconfiguration, the diodes may be centrally located within the junctionbox which also houses the cable connections to the module viapenetrations from the back-sheet of the laminated cell array. However,due to the central location of the junction box, additional electricalleads may need to be run between the cells at the end of the strings andthe junction box, adding additional cost, assembly steps and potentialfailure points. In accordance with an embodiment of the presentinvention, while a central junction box is appropriate for atwo-dimensional array of cells, it is not ideal for a concentratorphotovoltaic module with a linear cell array that would favorconnections at opposite ends of the cell string. For example, creatingelectrical runs down the entire length of the concentrator receiver mayadd significant cost and manufacturing complexity.

One additional hurdle that may need to be overcome when integratingdiode systems within a cell laminate or package is the thermalmanagement requirements of the diodes when they dissipate power inbypass operation. For example, in an embodiment, while the powerdissipated in the diode is small relative to the system power (since itis dissipated within the small diode package [e.g., <1 cm²]), thethermal load density reaches values that may require thermal coupling toa heat sink (ideally the same heat sink used for the cells).

As such, in accordance with an embodiment of the present invention, abypass diode or multiple bypass diodes are included internally within alaminated cell package and are thermally coupled to a cell mounted heatsink via cell interconnects and, in some embodiments, an additionalintegrated heat spreader. In one embodiment, rather than runningadditional electrical leads to bypass a set number of cells, each withback-sheet penetrations and an externally mounted diode, bypass diodesare integrated between the cell and interconnects on a diode-per-cell ordiode-per-two-cell basis, as described by comparing the structures ofFIG. 1 and FIGS. 2A and 2B. In an embodiment, an approach such as theapproach described in association with FIG. 2B allows for a narrowerreceiver package with lower material costs and a reduced form factorthan the approach of FIG. 1 or FIG. 2A.

A conventional approach to bypass diodes may be to include such diodesat a pitch of every 8 cells while utilizing a bypass circuit path andexternally mounted diode with laminate back-sheet penetrations. Forexample, FIG. 1 illustrates a plan view of a conventional optoelectronicsystem including a bypass circuit path and externally mounted diode.Referring to FIG. 1, a conventional photovoltaic system 100 includes aplurality of cells 102. At some fixed period, an external diode 104 isincluded for every several cells. Bypass circuit paths 106 are alsoincluded.

By contrast, in accordance with an embodiment of the present invention,internal bypass diodes may be included at a pitch of one-per-two-cellsmounted directly to the cell interconnects. In one embodiment, a cellstring is then laminated between a back-sheet and a glass superstrate toencapsulate diodes with the cell string. For example, FIG. 2Aillustrates a plan view of a portion of an optoelectronic system withinternal bypass diodes, in accordance with an embodiment of the presentinvention. Referring to FIG. 2A, a photovoltaic system 200 includes aplurality of cells 202. Bypass diodes 204 located between cellinterconnects 206 on the upper side of the cell are included, e.g., forevery pair of cells, as depicted in FIG. 2A. As depicted, bypass diodeslocated between interconnects on the lower side of the cell may beincluded as redundant diodes that allow increased reliability if thereare any failures in bypass diodes 204. Furthermore, these additionalbypass diodes may reduce cost and offer the highest performance forknown illumination irregularities that may occur. Cell interconnects 206run between the bypass diodes 204 and parallel to the pairs of cells202. In an additional embodiment, not depicted, additional diodes areplaced onto the lower interconnects allowing the ability to bypasscurrent on a paired cell basis, or even possibly on a single cell basis.In an embodiment, the frequency of diodes relative to cell pairs can beincreased or decreased at different locations within the receiver, e.g.,at the ends or central region of a receiver.

In accordance with an alternative embodiment, FIG. 2B illustrates a planview of a portion of an optoelectronic system with internal bypassdiodes, in accordance with an embodiment of the present invention.Referring to FIG. 2B, a photovoltaic system 250 includes bypass diodes252 on only one side of the array of cells 254. In one embodiment, anoptional bypass diode 256 is included in photovoltaic system 250 and isalso connected in parallel to the bypass diodes 252, which are connectedin series, as depicted in FIG. 2B. In a specific embodiment, a voltagedrop is mitigated or avoided that may otherwise occur when severalbypass diodes are connected in series.

In accordance with an embodiment of the present invention, by solderinga bypass diode between cell interconnects, the bypass diode is availablefor attachment at the same time as the cell string soldering operation,or may be pre-applied to the interconnects before the cells areattached. In one embodiment, this approach eliminates the needs forback-sheet penetrations and the subsequent assembly steps normally usedto attach potted enclosures to the backside of a laminate to protectexternal features of the cell string.

In accordance with an embodiment of the present invention, thermalmanagement of bypass diodes is accomplished by creating a suitablethermal path from the diode to the receiver heat sink via the cellinterconnects. In one embodiment, this approach requires a modified heatsink that extends beyond the cell to cover the interconnect area, aninterconnect design that maximizes area under the heat sink and anincreased interconnect thickness to allow better heat spreading down theinterconnect as, described in association with FIG. 3, below.

Thermal coupling between a bypass diode and heat sink may be providedvia a cell interconnect or a pair of cell interconnects. For example,FIG. 3 illustrates an isometric view of a portion of an optoelectronicsystem with internal bypass diodes, in accordance with an embodiment ofthe present invention. Referring to FIG. 3, a photovoltaic system 300includes a bypass diode 302 between cell interconnects 304 andintegrated with cells 306. In one embodiment, cell interconnects 304include interconnect extensions 308. In accordance with an embodiment ofthe present invention, a heat sink 310 is included above the cells 306.

In an embodiment, enhanced thermal management can also be accomplishedby integrating a heat spreader within a laminate or thermal package. Inone embodiment, a heat spreader extends over a cell and interconnectsand provides a parallel thermal path from a diode to the heat sink inaddition to the cell interconnect. In a specific embodiment, thisapproach reduces diode to ambient thermal resistance and reduces thethermal requirements for the cell interconnect. In an embodiment, a heatspreader can be designed with a recessed region to accommodate the diodevertical height or a through-via that traces the outer perimeter of thediode giving more vertical flexibility in diode form factor as,described below in association with FIGS. 4 and 5.

In an aspect of the present invention, an interconnect-integrated diodemay be included under a heat spreader with a recessed cavity toaccommodate the diode. For example, FIG. 4 illustrates a cross-sectionalview of an optoelectronic device with a bypass diode, in accordance withan embodiment of the present invention.

Referring to FIG. 4, an optoelectronic device 400 includes a bypassdiode 402. Optoelectronic device 400 also includes a heat spreader unit404 disposed above, and extending over, bypass diode 402. In accordancewith an embodiment of the present invention, heat spreader unit 404includes one or more dielectric layers 406 and one or more thermallyconductive layers 408, as depicted in FIG. 4. Optoelectronic device 400also includes a heat sink 410 disposed above heat spreader unit 404.

Referring again to FIG. 4, in an embodiment, bypass diode 402 isdisposed in a recessed cavity 412 under heat spreader unit 404. In anembodiment, bypass diode 402 is coupled with a pair of interconnects414, heat spreader unit 404 disposed above the pair of interconnects414, as depicted in FIG. 4. In one embodiment, bypass diode 402 and thepair of interconnects 414 are disposed above a transparent superstrate416, bypass diode 402 is coupled with the pair of interconnects 414 byone or more bond pads 418, and bypass diode 402 is separated fromtransparent superstrate 416 and heat spreader unit 404 by one or moreencapsulant layers 420. In an embodiment, heat sink 410 includes afolded fin separated from heat spreader unit 404 by one or more thermaladhesive layers 422, as depicted in FIG. 4. In an alternativeembodiment, not shown, heat sink 410 includes a plurality of stand-alonefins coupled by a common base, the common base separated from heatspreader unit 404 by one or more thermal adhesive layers. In anembodiment, the S-shaped bend in the bottom lead of diode 402 aids inreduction of coefficient of thermal expansion related stresses that maydevelop during normal operating temperature ranges. In an additionalembodiment, the interconnects 414 are bent with a similar S-shape and abare diode die is mounted directly between the interconnects, removingthe need for additional bond pads between the bare diode die and thediode leads.

In another embodiment, diode 402 is encapsulated prior to assembly toform optoelectronic device 400. In one embodiment, this approach allowsfor isolation of an elevated temperature of the diode die, which cantolerate significantly higher temperatures as compared withoptoelectronic system encapsulant 420. In one embodiment, the materialsurrounding such an initially encapsulated diode 402 is itselfencapsulated by a material different from optoelectronic systemencapsulant 420, as depicted by the different shading within the boxsurrounding diode 402 in FIG. 4.

In association with the discussion of FIGS. 2-4 above, a plurality ofoptoelectronic devices, such as the optoelectronic device of FIG. 4, maybe included in an optoelectronic system. Thus, in accordance with anembodiment of the present invention, an optoelectronic system includes aplurality of pairs of optoelectronic devices. In one embodiment, eachoptoelectronic device is a back-contact solar cell. The optoelectronicsystem also includes a plurality of bypass diodes, one or more of thebypass diodes disposed between each of the pairs of optoelectronicdevices. The optoelectronic system also includes a plurality of heatspreader units, one or more of the heat spreader units disposed above,and extending over, each of the bypass diodes. The optoelectronic systemalso includes a plurality of heat sinks, one or more of the heat sinksdisposed above each of the heat spreader units.

In an embodiment, each bypass diode of the above optoelectronic systemis disposed in a recessed cavity under one of the heat spreader units.In an embodiment, each bypass diode is coupled with a pair ofinterconnects, one of the heat spreader units disposed above the pair ofinterconnects. In one embodiment, each bypass diode and the respectivepair of interconnects are disposed above a transparent superstrate, eachbypass diode is coupled with the respective pair of interconnects by oneor more bond pads, and each bypass diode is separated from the substrateand the heat spreader unit by one or more encapsulant layers. In anembodiment, each heat sink includes a folded fin separated from therespective heat spreader unit by one or more thermal adhesive layers. Inan alternative embodiment, each heat sink includes a plurality ofstand-alone fins coupled by a common base, each common base separatedfrom the respective heat spreader unit by one or more thermal adhesivelayers. In an embodiment, the plurality of heat spreader units isprovided to couple heat from plurality of pairs of optoelectronicdevices with the plurality of heat sinks. This may differ from anapproach where bypass diodes are vertically integrated in-line with aheat sink and a cell.

In another aspect of the present invention, an interconnect-integrateddiode may be positioned relative to a heat spreader with through-holevia to accommodate the diode. For example, FIG. 5 illustrates across-sectional view of an optoelectronic device with a bypass diode, inaccordance with an embodiment of the present invention.

Referring to FIG. 5, an optoelectronic device 500 includes a bypassdiode 502. Optoelectronic device 500 also includes a heat spreader unit504 disposed above, but not extending over, bypass diode 502. Inaccordance with an embodiment of the present invention, heat spreaderunit 504 includes one or more dielectric layers 506 and one or morethermally conductive layers 508, as depicted in FIG. 5. Optoelectronicdevice 500 also includes a heat sink 510 disposed above heat spreaderunit 504.

Referring again to FIG. 5, in an embodiment, bypass diode 502 isdisposed in a through-hole via 512 disposed in heat spreader unit 504.In an embodiment, bypass diode 502 is coupled with a pair ofinterconnects 514, heat spreader unit 504 disposed above the pair ofinterconnects 514, as depicted in FIG. 5. In one embodiment, bypassdiode 502 and the pair of interconnects 514 are disposed above atransparent superstrate 516, bypass diode 502 is coupled with the pairof interconnects 514 by one or more bond pads 518, and bypass diode 502is separated from transparent superstrate 516 and heat spreader unit 504by one or more encapsulant layers 520. In an embodiment, heat sink 510includes a folded fin separated from heat spreader unit 504 by one ormore thermal adhesive layers 522, as depicted in FIG. 5. In analternative embodiment, not shown, heat sink 510 includes a plurality ofstand-alone fins coupled by a common base, the common base separatedfrom heat spreader unit 504 by one or more thermal adhesive layers. Inan embodiment, the S-shaped bend in the bottom lead of diode 502 aids inreduction of coefficient of thermal expansion related stresses that maydevelop during normal operating temperature ranges. In an additionalembodiment, the interconnects 514 are bent with a similar S-shape and abare diode die is mounted directly between the interconnects, removingthe need for additional bond pads between the bare diode die and thediode leads.

In another embodiment, diode 502 is encapsulated prior to assembly toform optoelectronic device 500. In one embodiment, this approach allowsfor isolation of an elevated temperature of the diode die, which cantolerate significantly higher temperatures as compared withoptoelectronic system encapsulant 520. In one embodiment, the materialsurrounding such an initially encapsulated diode 502 is itselfencapsulated by a material different from optoelectronic systemencapsulant 520, as depicted by the different shading within the boxsurrounding diode 502 in FIG. 5.

In association with the discussion of FIGS. 2, 3, and 5 above, aplurality of optoelectronic devices, such as the optoelectronic deviceof FIG. 5, may be included in an optoelectronic system. Thus, inaccordance with an embodiment of the present invention, anoptoelectronic system includes a plurality of pairs of optoelectronicdevices. In one embodiment, each optoelectronic device is a back-contactsolar cell. The optoelectronic system also includes a plurality ofbypass diodes, one or more of the bypass diodes disposed between each ofthe pairs of optoelectronic devices. The optoelectronic system alsoincludes a plurality of heat spreader units, one or more of the heatspreader units disposed above, but not extending over, each of thebypass diodes. The optoelectronic system also includes a plurality ofheat sinks, one or more of the heat sinks disposed above each of theheat spreader units.

In an embodiment, each bypass diode of the above optoelectronic systemis disposed in a through-hole via disposed in one of the heat spreaderunits. In an embodiment, each bypass diode is coupled with a pair ofinterconnects, one of the heat spreader units disposed above the pair ofinterconnects. In one embodiment, each bypass diode and the respectivepair of interconnects are disposed above a transparent superstrate, eachbypass diode is coupled with the respective pair of interconnects by oneor more bond pads, and each bypass diode is separated from the substrateand the heat spreader unit by one or more encapsulant layers. In anembodiment, each heat sink includes a folded fin separated from therespective heat spreader unit by one or more thermal adhesive layers. Inan alternative embodiment, each heat sink includes a plurality ofstand-alone fins coupled by a common base, each common base separatedfrom the respective heat spreader unit by one or more thermal adhesivelayers. In an embodiment, the plurality of heat spreader units isprovided to couple heat from plurality of pairs of optoelectronicdevices with the plurality of heat sinks. This may differ from anapproach where bypass diodes are vertically integrated in-line with aheat sink and a cell.

In an aspect of the present invention, the arrangements of FIGS. 4 and 5enables the outer surface of the enclosure of optoelectronic devices 400and 500, respectively, to be flat, providing a uniform surface forbonding a heat sink with an adhesive or other bonding material. FIG. 6illustrates a top-down view of an optoelectronic device with a heatspreader unit, in accordance with an embodiment of the presentinvention. Referring to FIG. 6, a system 600 includes two (or more)photovoltaic cells 602 and 604. A cell interconnect 606 is disposedabove photovoltaic cells 602 and 604. In a particular embodiment,photovoltaic cells 602 and 604 are serially connected. Also depicted isa bypass diode 612. In accordance with an embodiment of the presentinvention, at least one cell interconnect of the optoelectronic systemincludes one or more stress relief features. In one embodiment, partialthrough vias 650 around bypass diode 612 and cell bond pad (also at 606)accommodate for potential increased thickness of these features andensure a low thermal resistance flat surface for attaching a heat sink.

In another aspect of the present invention, bypass diodes may be used toavoid shaded-cell losses. For example, FIGS. 7A-7B illustrate a solarconcentrator apparatus with a summer solstice illumination pattern and awinter solstice illumination pattern, respectively, in accordance withan embodiment of the present invention.

Referring to FIG. 7A, a solar concentrator apparatus 700 can besubjected to an illumination pattern consistent with the sun being highabove the horizon, such as at summer solstice. A solar concentratingelement or collector, such as a lens (as shown in FIG. 7A), system oflenses, minor, or system of mirrors, is positioned above an array ofsolar cells 702. The solar cells in the array of solar cells 702 arecoupled via bypass diodes 704 and cell interconnects 706. The array ofsolar cells may also include heat exchange fins (shown as 708) and apower output wire (not shown).

In accordance with an embodiment of the present invention, insolation710A is received by the array of solar cells 702 at a time when the sunis directly above the solar concentrating element, or collector. In oneembodiment, the solar concentrating element, or collector providesillumination 712A to the entire array of solar cells 702, as depicted inFIG. 7A.

Referring to FIG. 7B, the solar concentrator apparatus 700 can also besubjected to an illumination pattern consistent with the sun being lowabove the horizon, such as at winter solstice. In accordance with anembodiment of the present invention, insolation 710B is received by thearray of solar cells 702 at a time when the sun is not directly abovethe solar concentrating element, or collector. In one embodiment, thesolar concentrating element, or collector provides illumination 712B toonly a portion of the array of solar cells 702, as depicted in FIG. 7B.In an embodiment, the cells that are not illuminated cannot pass therequired current and would otherwise be forced into a power dissipationmode (e.g., reverse bias) to accommodate the current generated by theilluminated cells. The cells may then sink some of the generated powerwhile heating significantly.

Accordingly, in an embodiment, bypass diodes such as the bypass diodesdescribed herein are used to remove groupings of cells at the end orends of a linear receiver such that little power is lost due to thecells in the array which are not receiving and incident insolation. Inone embodiment, the bypass diodes on an array of solar cells arearranged in a way consistent with optimization of cost and performance.For example, in a specific embodiment, an arrangement of solar cells andbypass diodes provides bypassing the final 2, 4, 6, 8 or 10 cells in alinear grouping of cells.

Thus, optoelectronic devices with bypass diodes have been disclosed. Inaccordance with an embodiment of the present invention, anoptoelectronic device includes a bypass diode, a heat spreader unitdisposed above, and extending over, the bypass diode, and a heat sinkdisposed above the heat spreader unit. In one embodiment, the bypassdiode is disposed in a recessed cavity under the heat spreader unit. Inaccordance with another embodiment of the present invention, anoptoelectronic device includes a bypass diode, a heat spreader unitdisposed above, but not extending over, the bypass diode, and a heatsink disposed above the heat spreader unit. In one embodiment, thebypass diode is disposed in a through-hole via disposed in the heatspreader unit.

1-11. (canceled)
 12. A solar cell, comprising: a bypass diode; a heatspreader unit disposed above, but not extending over, the bypass diode;and a heat sink disposed above the heat spreader unit.
 13. The solarcell of claim 12, wherein the bypass diode is disposed in a through-holevia disposed in the heat spreader unit.
 14. The solar cell of claim 12,wherein the bypass diode is coupled with a pair of interconnects, theheat spreader unit disposed above the pair of interconnects.
 15. Thesolar cell of claim 14, wherein the bypass diode and the pair ofinterconnects are disposed above a transparent superstrate, wherein thebypass diode is coupled with the pair of interconnects by one or morebond pads, and wherein the bypass diode is separated from thetransparent superstrate and the heat spreader unit by one or moreencapsulant layers.
 16. The solar cell of claim 12, wherein the heatsink comprises a folded fin separated from the heat spreader unit by oneor more thermal adhesive layers.
 17. A solar system, comprising: aplurality of pairs of solar cells; a plurality of bypass diodes, one ormore bypass diodes disposed between each of the pairs of solar cells; aplurality of heat spreader units, one or more heat spreader unitsdisposed above, but not extending over, each of the bypass diodes; and aplurality of heat sinks, one or more heat sinks disposed above each ofthe heat spreader units.
 18. The solar system of claim 17, furthercomprising: a solar concentrating element disposed above the pluralityof pairs of solar cells, the solar concentrating element to concentrateinsolation on light-receiving surfaces of the pairs of solar cells,wherein the plurality of bypass diodes is configured to bypass one ormore of the pairs of the solar cells when insolation is not received bythe one or more of the pairs of the solar cells.
 19. The solar system ofclaim 18, wherein solar concentrating element is an element selectedfrom the group consisting of a mirror, a grouping of minors, a lens, agrouping of lenses, and a combination of one or more minors with one ormore lenses.
 20. The solar system of claim 17, wherein each bypass diodeis disposed in a through-hole via disposed in one of the heat spreaderunits.
 21. The solar system of claim 17, wherein each bypass diode iscoupled with a pair of interconnects, one of the heat spreader unitsdisposed above the pair of interconnects.
 22. The solar system of claim21, wherein each bypass diode and the respective pair of interconnectsare disposed above a transparent superstrate, wherein each bypass diodeis coupled with the respective pair of interconnects by one or more bondpads, and wherein each bypass diode is separated from the transparentsuperstrate and the heat spreader unit by one or more encapsulantlayers.
 23. The solar system of claim 17, wherein each heat sinkcomprises a folded fin separated from the respective heat spreader unitby one or more thermal adhesive layers.
 24. The solar system of claim17, wherein the plurality of heat spreader units is provided to coupleheat from plurality of pairs of solar cells with the plurality of heatsinks.